FZ750R65KE3

英飛凌IGBT模塊FZ750R65KE3

德國Infineon英飛凌IGBT功率模塊FZ750R65KE3

6500V高壓IGBT模塊FZ750R65KE3

FZ750R65KE3參數(shù)：VCES=6500V ;IC=600A
FZ600R65KE3廣泛用于機車牽引變流器，高中壓變流器
FZ600R65KE3機械特性
碳化硅鋁（AlSiC）基板提供更高的溫度循環(huán)能力
擴大存儲溫度范圍至Tstg=-55°C
封裝的CTI>600
加強絕緣封裝，10.2kV交流1分鐘
高爬電距離和電氣間隙

4.5kV, IGBT3 - L3, Single switch
FZ1200R45HL3  
for price proj. only
Single switch 1200.0 A IGBT3 - L3 2.65 V 2.5 V
FZ1200R45KL3_B5  
in production
Single switch 1200.0 A IGBT3 - L3 2.5 V 2.5 V
FZ800R45KL3_B5  
in production
Single switch 800.0 A IGBT3 - L3 2.5 V 2.5 V
4.5kV, Diode
DD1200S45KL3_B5  
in production
Diodes 1200.0 A Diode - 2.5 V
DD400S45KL3_B5  
in production
Diodes 400.0 A Diode - 2.5 V
6.5kV, IGBT3 - E3, Chopper
FD500R65KE3-K  
in production
Chopper 500.0 A IGBT3 - E3 3.0 V 3.0 V
FD250R65KE3-K  
in production
Chopper 250.0 A IGBT3 - E3 3.0 V 3.0 V
6.5kV, IGBT3 - E3, Single switch
FZ750R65KE3  
in production
Single switch 750.0 A IGBT3 - E3 3.0 V 3.0 V
FZ600R65KE3  
in production
Single switch 600.0 A IGBT3 - E3 3.0 V 3.0 V
FZ500R65KE3  
in production
Single switch 500.0 A IGBT3 - E3 3.0 V 3.0 V
FZ400R65KE3  
in production
Single switch 400.0 A IGBT3 - E3 3.0 V 3.0 V
FZ250R65KE3  
in production
Single switch 250.0 A IGBT3 - E3 3.0 V 3.0 V
6.5kV, Diode 北京京誠宏泰科技有限公司銷售英飛凌IGBT模塊FZ600R65KE3
DD750S65K3  
in production
Diodes 750.0 A Diode - 3.0 V
DD600S65K3  
in production
Diodes 600.0 A Diode - 3.0 V
DD500S65K3  
in production
Diodes 500.0 A Diode - 3.0 V
DD250S65K3  
in production
Diodes 250.0 A Diode - 3.0 V
FZ200R65KF2
FZ200R33KF2C
FZ400R65KF2
FZ400R65KE3
FZ500R65KE3
FZ600R65KF2
FZ600R65KE3
FZ750R65KE3
FZ800R33KF2C